The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2007

Filed:

Nov. 26, 2002
Applicants:

Paul Nicholas Stavrinou, London, GB;

Timothy Simon Jones, Surrey, GB;

Gareth Parry, Herts, GB;

Inventors:

Paul Nicholas Stavrinou, London, GB;

Timothy Simon Jones, Surrey, GB;

Gareth Parry, Herts, GB;

Assignee:

EPIIC Limited, London, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a method of producing multiple semiconductor components on a substrate, said method comprising the steps of: forming a predetermined relief pattern on a surface of said substrate; and epitaxially depositing a layer formed of a mixture of two or more Group III elements and two or more Group V elements on said surface; wherein said relief pattern results in said layer deposited in a single step forming with a different ratio between said Group V elements within areas having different relief pattern characteristics so as to provide different band gaps within said different areas.


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