This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2014
Title: Gaowei Xu: Innovator in Flux Free Indium Bumping Technology
Introduction
Gaowei Xu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor packaging through his innovative methods. His work focuses on enhancing the efficiency and effectiveness of indium bumping processes, which are crucial for various applications in technology.
Latest Patents
Gaowei Xu holds a patent for a method to realize flux free indium bumping. This method includes several steps such as substrate metallization, contact holes opening, underbump metallization (UBM) layer thickening, indium bump preparation, and Ag layer coating. The process is particularly beneficial for special applications, including the packaging of photoelectric chips, MEMS, and biological detection chips, where the use of flux is prohibited. He has 1 patent to his name.
Career Highlights
Gaowei Xu is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced semiconductor technologies. His work has been instrumental in pushing the boundaries of what is possible in the field of microelectronics.
Collaborations
He has collaborated with notable colleagues such as Yuan Yuan and Qiuping Huang, contributing to various projects that aim to advance semiconductor packaging techniques.
Conclusion
Gaowei Xu's innovative approach to flux free indium bumping represents a significant advancement in semiconductor technology. His contributions are paving the way for future developments in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile