The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Oct. 21, 2011
Applicants:
Qiuping Huang, Shanghai, CN;
Le Luo, Shanghai, CN;
Gaowei Xu, Shanghai, CN;
Yuan Yuan, Shanghai, CN;
Inventors:
Qiuping Huang, Shanghai, CN;
Le Luo, Shanghai, CN;
Gaowei Xu, Shanghai, CN;
Yuan Yuan, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); C25D 5/10 (2006.01); C25D 5/50 (2006.01); C25D 5/02 (2006.01); C25D 3/46 (2006.01); C25D 3/54 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); C25D 5/10 (2013.01); C25D 5/50 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); C25D 5/02 (2013.01); C25D 3/46 (2013.01); C25D 3/54 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03849 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11825 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13639 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01322 (2013.01); H01L 24/94 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/94 (2013.01);
Abstract
A method to realize flux free indium bumping process includes several steps including substrate metallization, contact holes opening, underbump metallization (UBM) layer thickening, indium bump preparation and Ag layer coating. The method can be used in the occasion for some special application, e.g., the packaging of the photoelectric chip (with optical lens), MEMS and biological detection chip, where the usage of flux is prohibited.