This inventor holds 1 USPTO granted patent. Top assignee: University of Electronic Science and Technology of China. Active years: 2019.
Company Filing History:
Years Active: 2019
Title: Innovations of Gaoqiang Deng in Power Semiconductor Devices.
Introduction
Gaoqiang Deng is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of power semiconductor devices, particularly through his innovative work on reverse conducting insulated gate bipolar transistors (RC-IGBT).
Latest Patents
Gaoqiang Deng holds a patent for a reverse conducting insulated gate bipolar transistor. This invention relates to the technical field of power semiconductor devices. The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical field cutting-off region. The beneficial effect of this invention is that, when compared with traditional RC-IGBTs, it can eliminate the negative resistance effect and effectively improve the performance of both forward and reverse conduction. He has 1 patent to his name.
Career Highlights
Gaoqiang Deng is affiliated with the University of Electronic Science and Technology of China. His work at this institution has allowed him to focus on advancing semiconductor technology and contributing to academic research in this vital area.
Collaborations
Some of his notable coworkers include Xiaorong Luo and Kun Zhou. Their collaborative efforts have further enhanced the research and development of innovative semiconductor solutions.
Conclusion
Gaoqiang Deng's contributions to the field of power semiconductor devices, particularly through his patented RC-IGBT technology, highlight his role as a key innovator in this industry. His work continues to influence advancements in semiconductor performance and efficiency.