The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
May. 22, 2017
University of Electronic Science and Technology of China, Chengdu, CN;
Xiaorong Luo, Chengdu, CN;
Gaoqiang Deng, Chengdu, CN;
Kun Zhou, Chengdu, CN;
Qing Liu, Chengdu, CN;
Linhua Huang, Chengdu, CN;
Tao Sun, Chengdu, CN;
Bo Zhang, Chengdu, CN;
University of Electronic Science and Technology of China, Chengdu, CN;
Abstract
The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.