Gaoqi Yang

Title: Gaoqi Yang and Three-Dimensional Memory Technology.

Introduction

Gaoqi Yang is an inventor associated with Peking University in Beijing, China. His listed patent concerns a three-dimensional memory array and a method for preparing it.

Latest Patents

Yang is credited with 1 patent: “Three-dimensional memory array and preparation method thereof.” The disclosure describes memory cells arranged in an array, with each cell connected between a word line and a bit line. A gating transistor is positioned beneath each word line, with its drain connected to the word line, its gate connected to a gate line, and its source connected to a source line. The bit, word, source, and gate lines work together to control the memory cell’s state.

Career Highlights

The available information associates Yang’s work with Peking University. His patent focuses on the structure and preparation of a three-dimensional memory array.

Collaborations

Yimao Cai and Zongwei Wang are identified as Yang’s coworkers.

Conclusion

Gaoqi Yang’s listed patent presents a three-dimensional memory-array design that uses coordinated lines and gating transistors to control memory cells.