Ganesh Kolliyil Rajan

Title: Ganesh Kolliyil Rajan: Innovator in Magnetoresistive Technologies

Introduction

Ganesh Kolliyil Rajan is a notable inventor based in Singapore, recognized for his contributions to the field of magnetoresistive technologies. With a total of 2 patents, he has made significant advancements in the design and functionality of magnetoresistive devices and non-volatile memory elements.

Latest Patents

His latest patents include innovative designs for a magnetoresistive device and structures for a non-volatile memory element. The first patent, titled "Magnetoresistive stack and methods therefor," describes a device that features a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. This design incorporates one or more transition regions, including a non-ferromagnetic transition metal and an alloy of iron and boron. The second patent, "Seed layers for a non-volatile memory element," outlines a structure that consists of a bottom electrode, a seed layer made from a nickel-chromium-ruthenium alloy, and a magnetic-tunneling-junction layer stack.

Career Highlights

Ganesh has worked with prominent companies in the technology sector, including Globalfoundries Singapore Pte. Ltd. and Everspin Technologies, Inc. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge research and development in magnetoresistive technologies.

Collaborations

Throughout his career, Ganesh has collaborated with esteemed colleagues such as Yuichi Otani and Kazutaka Yamane. These partnerships have fostered an environment of innovation and have led to the successful development of advanced technologies.

Conclusion

Ganesh Kolliyil Rajan's work in magnetoresistive technologies exemplifies his commitment to innovation and excellence in the field. His patents and collaborations highlight his significant contributions to the advancement of technology.