Günther Obermeier

Title: Günther Obermeier: Innovator in Semiconductor Technology

Introduction

Günther Obermeier is a notable inventor based in Palling, Germany. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to semiconductor wafer production.

Latest Patents

Obermeier's latest patents include a method for the production of an epitaxially grown semiconductor wafer. This invention addresses the challenges associated with crystal lattice defects in semiconductor wafers. His second patent describes a semiconductor wafer that features a front side, a back side, a top layer, a bottom layer, an upper inner layer lying below the top layer, a lower inner layer lying above the bottom layer, and a central region between the layers. The design includes an uneven distribution of crystal lattice defects, with the concentration of defects exhibiting a first maximum in the central region and a second maximum in the bottom layer.

Career Highlights

Throughout his career, Obermeier has worked with prominent companies in the semiconductor industry. He has been associated with Wacker Siltronic Gesellschaft für Halbleiter Materialien AG, a leading manufacturer of semiconductor materials. His work has contributed to advancements in the production and quality of semiconductor wafers.

Collaborations

Obermeier has collaborated with notable colleagues, including Rüdiger Schmolke and Reinhard Schauer. These partnerships have played a crucial role in the development of his innovative technologies.

Conclusion

Günther Obermeier's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the industry and pave the way for future advancements in semiconductor materials.