Gain Kim

Title: Gain Kim: An Inventor in Resistive Memory-Based Circuit Design.

Introduction

Gain Kim is an inventor associated with Lausanne, Switzerland. His work includes a patent on resistive random access memory (RRAM)-based multiplexers and field-programmable gate arrays (FPGAs). He is associated with École Polytechnique Fédérale de Lausanne and the University of Utah Research Foundation. Kim has 1 patent listed in the information provided.

Latest Patents

Kim’s patent, “Resistive Random Access Memory Based Multiplexers and Field Programmable Gate Arrays,” describes circuit designs that use RRAMs in multiplexers and FPGAs. The invention uses a 4T1R programming structure, with four programming transistors arranged to set and reset an RRAM.

In the described multiplexer, programming transistors connected to the RRAM bottom electrodes are shared among multiple RRAMs. The shared transistors and an output inverter are placed in a deep N-well, while the top-electrode programming transistors and input inverters are placed in a regular well. This arrangement provides a specific architecture for programming and integrating RRAM devices in these circuits.

Career Highlights

Kim’s listed institutional affiliations include École Polytechnique Fédérale de Lausanne and the University of Utah Research Foundation. His patent reflects work at the intersection of memory technology and programmable circuit design.

Collaborations

The collaborators identified in the provided information are Pierre-Emanuel Gaillardon and Xifan Tang.

Conclusion

Gain Kim’s patent describes an RRAM-based approach to multiplexers and FPGAs, including a transistor-sharing arrangement for programming memory elements. His listed affiliations and collaborators provide context for his work in this area of circuit innovation.