Gabriel Mugny

Title: Gabriel Mugny: Innovator in Integrated Circuit Technology

Introduction

Gabriel Mugny is a notable inventor based in Grenoble, France. He has made significant contributions to the field of integrated circuits, particularly through his work on single photon avalanche diodes (SPADs). With a total of 2 patents, Mugny's innovations are paving the way for advancements in semiconductor technology.

Latest Patents

One of Gabriel Mugny's latest patents involves an integrated circuit comprising a single photon avalanche diode and the corresponding manufacturing method. This SPAD includes a PN junction in a semiconductor well that is doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant, which is opposite to the first type. The design of the first doped region incorporates local variations in the concentration of dopants. These variations are configured to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well when a specific voltage is applied.

Career Highlights

Gabriel Mugny has worked with prominent companies in the semiconductor industry, including STMicroelectronics in Crolles and STMicroelectronics Research & Development Limited. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in integrated circuits.

Collaborations

Throughout his career, Mugny has collaborated with esteemed colleagues such as Denis Rideau and Dominique Golanski. These partnerships have fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Gabriel Mugny's work in integrated circuit technology, particularly with single photon avalanche diodes, showcases his innovative spirit and dedication to advancing semiconductor technology. His contributions are significant in shaping the future of this field.