The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Feb. 27, 2024
Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics (Research & Development) Limited, Marlow, GB;
Denis Rideau, Grenoble, FR;
Dominique Golanski, Gieres, FR;
Alexandre Lopez, Eindhoven, NL;
Gabriel Mugny, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics (Research & Development) Limited, Marlow, GB;
Abstract
A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.