This inventor holds 3 USPTO granted patents. Top assignee: Stmicroelectronics International N.v.. Active years: 2012-2013.
Company Filing History:
Years Active: 2012-2013
Title: G Penaka Phani: Innovator in Semiconductor Memory Technology
Introduction
G Penaka Phani is a notable inventor based in Greater Noida, India. He has made significant contributions to the field of semiconductor memory technology, holding a total of 3 patents. His work focuses on enhancing memory circuits and improving the efficiency of data storage.
Latest Patents
One of his latest patents is titled "Sense amplifier using reference signal through standard MOS and DRAM capacitor." This invention involves a memory circuit that includes a first memory cell node capacitor and a pre-charging circuit for pre-charging memory cell nodes to specific voltage levels. The circuit also features a reference memory cell that detects potential differences between reference bit lines and memory cell nodes.
Another significant patent is "Pass-gated bump sense amplifier for embedded DRAMs." This invention describes a sensing circuit that includes conducting lines for bit signals and a sense amplifier that is coupled to these lines. The circuit is designed to generate a predefined potential, enhancing the performance of semiconductor memory devices.
Career Highlights
G Penaka Phani is currently employed at STMicroelectronics International N.V., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern electronics.
Collaborations
He collaborates with talented professionals such as Sanjay Kumar Yadav and Shailendra Sharad, contributing to a dynamic work environment that fosters innovation and creativity.
Conclusion
G Penaka Phani's contributions to semiconductor memory technology are noteworthy, and his patents reflect his commitment to advancing the field. His work at STMicroelectronics International N.V. continues to influence the future of memory circuits and data storage solutions.