G Glenn Evans

Title: G Glenn Evans: Innovator in Low Voltage Nonvolatile Memory Devices

Introduction

G Glenn Evans is a notable inventor based in Kettering, OH (US). He has made significant contributions to the field of memory devices, particularly with his innovative patent related to low voltage nonvolatile memory technology. His work has implications for the efficiency and functionality of memory storage solutions.

Latest Patents

G Glenn Evans holds a patent for a low voltage write, avalanche breakdown, nonvolatile MNOSFET memory device. This device is designed as an n-channel enhancement mode, split-gate or trigate structure. It features a first, relatively highly doped p+ channel region and a second, underlying p-region. The p+ region is coextensive with the thin memory oxide structure. The binary state of the device is determined by applying a low voltage (e.g., +12v) to the gate while simultaneously applying a suitable voltage to the source and/or drain. This process induces avalanche breakdown in the channel, allowing the device to be written to a '1' state or maintained in its original '0' state.

Career Highlights

G Glenn Evans is currently employed at NCR Corporation, where he continues to develop innovative technologies. His work at NCR Corporation has allowed him to focus on advancements in memory devices, contributing to the company's reputation for technological excellence.

Collaborations

Throughout his career, G Glenn Evans has collaborated with notable colleagues, including Murray L Trudel and George C Lockwood. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the field of memory devices.

Conclusion

G Glenn Evans is a distinguished inventor whose work in low voltage nonvolatile memory devices has made a significant impact in the technology sector. His contributions continue to influence advancements in memory storage solutions, showcasing the importance of innovation in this field.