Ncr Corporation

G Glenn Evans

George C Lockwood

Murray L Trudel

A low voltage write, avalanche breakdown, nonvolatile MNOSFET memory device. The device is preferably an n-channel enhancement mode, split-gate or trigate structure having a first, relatively highly doped p+ channel region and a second, underlying p-region. The p+ region is coextensive with the thin, memory oxide structure. The binary state of the device is selected by applying a low voltage (e.g., +12v) to the gate and simultaneously applying a suitable voltage to the source and/or drain to induce avalanche breakdown in the channel, or not, to write the device to a '1' state or maintain the device in its original '0' state.

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Kettering, OH, United States of America

G Glenn Evans