The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1982
Filed:
Oct. 01, 1980
Murray L Trudel, Centerville, OH (US);
George C Lockwood, Dayton, OH (US);
G Glenn Evans, Kettering, OH (US);
NCR Corporation, Dayton, OH (US);
Abstract
A low voltage write, avalanche breakdown, nonvolatile MNOSFET memory device. The device is preferably an n-channel enhancement mode, split-gate or trigate structure having a first, relatively highly doped p+ channel region and a second, underlying p-region. The p+ region is coextensive with the thin, memory oxide structure. The binary state of the device is selected by applying a low voltage (e.g., +12v) to the gate and simultaneously applying a suitable voltage to the source and/or drain to induce avalanche breakdown in the channel, or not, to write the device to a '1' state or maintain the device in its original '0' state.