Douliu, Taiwan

Fuxuan Fang

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fuxuan Fang. Retrieved from https://idiyas.com/inventor/fuxuan-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Fuxuan Fang

Introduction

Fuxuan Fang, an accomplished inventor based in Douliou, Taiwan, has made significant contributions to the field of semiconductor manufacturing. With 1 patent to his name, Fang's work focuses on advancing techniques that enhance the precision of critical dimensions in hard mask patterns.

Latest Patents

Fang's notable patent, titled "Method to control critical dimension of a hard masked pattern," describes an innovative approach to reducing the critical dimension (CD) of a hard mask using a wet etch method. The process involves treating an oxide hard mask with a HSO/HO(SPM) solution, followed by an NHOH/HO/HO (APM) solution, allowing for a CD reduction of 0 to 20 nanometers. This method is meticulously designed to ensure that with the use of nitride or oxynitride hard masks, a buffered HF dip is incorporated prior to the SPM treatment to optimize the etching process. The detailed method provides cutting-edge solutions for maintaining gate lengths of less than 150 nm while controlling the CD within a tight range of 3 to 5 nm of targeted values.

Career Highlights

Fuxuan Fang works at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in the field has positioned him as a key player in advancing manufacturing techniques that are crucial to the production of smaller, more efficient electronic components. Fang's innovative methods play a pivotal role in enhancing the performance of semiconductor devices.

Collaborations

Throughout his career, Fang has collaborated with accomplished colleagues such as Chao-Tzung Tsai and Jia-Sheng Wu. These partnerships have fostered an environment of innovation and creativity, enabling them to tackle complex challenges in semiconductor processing and contribute significantly to their field.

Conclusion

Fuxuan Fang exemplifies the spirit of innovation that drives progress in the semiconductor industry. His patent on controlling the critical dimension of hard masked patterns reflects a commitment to excellence and a forward-thinking approach to technological challenges. As Fang continues to work alongside talented professionals, his contributions will undoubtedly pave the way for future advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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