Tokyo, Japan

Fumio Yoshioka

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 2019.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Fumio Yoshioka: Innovator in Memory Device Technology

Introduction

Fumio Yoshioka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of non-volatile semiconductor memory technology. His innovative work has led to the development of a patented memory device that addresses critical issues in data storage.

Latest Patents

Yoshioka holds a patent for a memory device and storage apparatus. This invention specifies a failure region when a failure occurs in a non-volatile semiconductor memory. The device controller reads data stored in a specific page across multiple non-volatile semiconductor memories to detect uncorrectable errors. The diagnosis process includes identifying a specific storage circuit, reading data from parts of blocks within that circuit, and determining the failure region based on the results.

Career Highlights

Fumio Yoshioka is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to focus on advancing memory device technology, contributing to the company's reputation for excellence in the semiconductor industry.

Collaborations

Yoshioka has collaborated with notable colleagues, including Kenta Ninose and Takuji Itou. These partnerships have fostered a collaborative environment that enhances innovation and problem-solving in their projects.

Conclusion

Fumio Yoshioka's contributions to memory device technology exemplify the impact of innovative thinking in the semiconductor industry. His patented work continues to influence advancements in data storage solutions.

Profile summary based on public USPTO records.
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