Hanno, Japan

Fumihiro Homma

This inventor holds 1 USPTO granted patent. Top assignee: Shindengen Electric Manufacturing Company Limited. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumihiro Homma. Retrieved from https://idiyas.com/inventor/fumihiro-homma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Fumihiro Homma: Innovator in Semiconductor Technology

Introduction

Fumihiro Homma is a notable inventor based in Hanno, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device manufacturing method.

Latest Patents

Fumihiro Homma holds 1 patent for his invention titled "Semiconductor device manufacturing method and semiconductor device." This patent outlines a comprehensive process that includes several key steps. The method involves a pretreatment step for hydrophobic treatment, an impurity supplying step, a channel stopper forming step using laser irradiation, and a glass layer forming step to cover the exposed surface.

Career Highlights

Homma is associated with Shindengen Electric Manufacturing Company Limited, where he has been instrumental in advancing semiconductor manufacturing techniques. His expertise in this area has positioned him as a valuable asset to the company and the industry.

Collaborations

Fumihiro Homma has worked alongside his coworker, Atsushi Ogasawara, contributing to various projects within the semiconductor field. Their collaboration has fostered innovation and development in semiconductor technologies.

Conclusion

Fumihiro Homma's contributions to semiconductor technology through his patented methods highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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