Shenzhen, China

Fuli Cui

This inventor holds 1 USPTO granted patent. Top assignee: Honor Device Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fuli Cui. Retrieved from https://idiyas.com/inventor/fuli-cui-ae1kbqkc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Fuli Cui - Innovator in Electronic Devices

Introduction

Fuli Cui is a notable inventor based in Shenzhen, China. He has made significant contributions to the field of electronic devices, particularly through his innovative patent work. His expertise in utilizing advanced materials has led to the development of cutting-edge technology.

Latest Patents

Fuli Cui holds a patent for a heat plate and electronic device. This application provides a vapor chamber and an electronic device. The vapor chamber is formed by arranging, in a stacked manner, a plurality of graphite sheets made of graphite or graphene. This innovation showcases his ability to integrate materials science with electronic engineering.

Career Highlights

Cui is currently employed at Honor Device Co., Ltd., where he continues to push the boundaries of technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices. With 1 patent to his name, he is recognized for his contributions to the industry.

Collaborations

Fuli Cui has worked alongside talented individuals such as Guochao Fu and Yuanru Yang. Their collaborative efforts have fostered an environment of innovation and creativity within their projects.

Conclusion

Fuli Cui's work exemplifies the spirit of innovation in the electronic device sector. His contributions, particularly in the development of vapor chambers, highlight the importance of advanced materials in modern technology. His ongoing efforts at Honor Device Co., Ltd. promise to lead to further advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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