This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Hunan Sanan Semiconductor Co., Ltd.. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Fuchin Chang: Innovator in High-Electron-Mobility Transistor Technology
Introduction
Fuchin Chang is a notable inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron-mobility transistors (HEMTs). His innovative work has led to advancements that are crucial for modern electronic devices.
Latest Patents
Fuchin Chang holds a patent for an "Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same." This patent describes an epitaxial structure that includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer, all sequentially stacked. The buffer layered unit consists of multiple p-i-n heterojunction stacks, each made of materials represented by the chemical formulas of AlGaN. The design allows for variations in the composition of the layers, enhancing the performance of the transistor.
Career Highlights
Fuchin Chang is currently employed at Hunan Sanan Semiconductor Co., Ltd. His work at this company has positioned him as a key player in the semiconductor industry. With a focus on innovation, he continues to push the boundaries of what is possible in electronic component design.
Collaborations
Fuchin Chang collaborates with talented individuals such as Boting Liu and Yutao Fang. Their combined expertise contributes to the advancement of semiconductor technologies and the successful implementation of innovative solutions.
Conclusion
Fuchin Chang's contributions to high-electron-mobility transistor technology exemplify the impact of innovation in the semiconductor industry. His patent and ongoing work at Hunan Sanan Semiconductor Co., Ltd. highlight his role as a leading inventor in this field.