Fuad H Al-Amoody

Title: Fuad H Al-Amoody: Innovator in Semiconductor Structures

Introduction

Fuad H Al-Amoody is a notable inventor based in Rexford, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on advanced semiconductor structures that enhance the performance and reliability of electronic devices.

Latest Patents

Among his latest patents, one is titled "Fin structures," which relates to semiconductor structures and methods of manufacture. This patent describes a structure that includes a plurality of fin structures formed of substrate material, with semiconductor material located between selected fin structures and isolation regions within the spaces between them. Another significant patent is "Protected trench isolation for fin-type field-effect transistors." This patent outlines methods for forming a fin-type field-effect transistor, detailing the formation of a gate structure that extends across multiple semiconductor fins, along with the deposition of a spacer layer composed of dielectric material.

Career Highlights

Fuad H Al-Amoody has built a successful career at GlobalFoundries Inc., where he continues to innovate in semiconductor technology. His expertise in fin structures and field-effect transistors has positioned him as a key contributor to advancements in the industry.

Collaborations

Throughout his career, Fuad has collaborated with esteemed colleagues, including Jinping Liu and Joseph K Kassim. These collaborations have further enriched his work and contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Fuad H Al-Amoody's contributions to semiconductor structures and his innovative patents reflect his dedication to advancing technology in the field. His work continues to influence the development of more efficient and reliable electronic devices.