Fu-Hsiang Yang

Title: Fu-Hsiang Yang: Innovator in Semiconductor Technology

Introduction

Fu-Hsiang Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advanced semiconductor devices, particularly in the area of field effect transistors.

Latest Patents

Among his latest patents is a semiconductor device that includes a gate-all-around field effect transistor. This innovative method of manufacturing a semiconductor device involves forming multiple semiconductor layers with varying compositions over a substrate. The process includes creating a fin structure and a nanowire, which enhances the device's performance. Another notable patent details a similar method of manufacturing a semiconductor device, emphasizing the importance of different materials in the construction of these layers.

Career Highlights

Fu-Hsiang Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His expertise and innovative approaches have positioned him as a key figure in the development of cutting-edge semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Shao-Ming Yu and Tung Ying Lee, contributing to various projects that advance semiconductor research and development.

Conclusion

Fu-Hsiang Yang's contributions to semiconductor technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of semiconductor devices.