Kuna, ID, United States of America

Fred Daniel Gealy, Iii

USPTO Granted Patents = 2 

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020-2021

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Fred Daniel Gealy, III

Introduction

Fred Daniel Gealy, III, hailing from Kuna, ID, is an accomplished inventor with a notable record of innovation in the field of memory structures. With a total of two patents to his name, Gealy exemplifies the spirit of creativity and technical expertise that drives advancements in technology.

Latest Patents

Gealy's latest patents focus on developing memory structures with improved write endurance. His innovations include a memory structure that features a memory cell and a first barrier layer designed to minimize contaminant movement to or from the memory cell. This barrier layer has a maximum hydrogen diffusion coefficient of 1×10 cm/s, showcasing Gealy's commitment to enhancing the reliability and performance of memory technology.

Career Highlights

Currently, Fred Daniel Gealy, III is associated with Intel Corporation, one of the leading technology companies globally. His work at Intel involves pushing the boundaries of what's possible in memory technology, making significant contributions to the field that address modern computing needs.

Collaborations

Throughout his career, Gealy has collaborated with esteemed colleagues, including Karthik Sarpatwari and Dale Collins. Working alongside such talented individuals has allowed him to further refine his ideas and advance the capabilities of memory structures in innovative ways.

Conclusion

Fred Daniel Gealy, III's contributions to the realm of memory technology are significant, marked by his two patents and his role at Intel Corporation. His dedication to innovation helps pave the way for future advancements in memory structures, benefiting the technology landscape as a whole.

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