The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Jun. 08, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Karthik Sarpatwari, Meridian, ID (US);
Dale Collins, Boise, ID (US);
Anna Maria Conti, Agrate Brianza, IT;
Fred Daniel Gealy, III, Kuna, ID (US);
Andrea Gotti, Vaprio d'Adda, IT;
Swapnil Lengade, Boise, ID (US);
Stephen Russell, Boise, ID (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/143 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01);
Abstract
A memory structure can include a memory cell and a first barrier layer having a maximum hydrogen diffusion coefficient of 1×10cm/s, said first barrier layer adjacent to the memory cell to minimize contaminant movement to or from the memory cell.