Austin, TX, United States of America

Fred Cumpian

This inventor holds 1 USPTO granted patent. Top assignee: Motorola Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fred Cumpian. Retrieved from https://idiyas.com/inventor/fred-cumpian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2002

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Fred Cumpian and His Patent for Deep-Fuse Access

Introduction

Fred Cumpian is an inventor associated with Austin, Texas, and Motorola Corporation. His patent work addresses a semiconductor fabrication method for creating a cavity that can reach deep fuse structures.

Latest Patents

The supplied information identifies one patent for Cumpian: “Method for Forming a Cavity Capable of Accessing Deep Fuse Structures and Device Containing the Same.” The method uses a staged etching process. First, a mask is formed over a structure such as a poly fuse, and an etch is made partway through a first dielectric layer. A second dielectric layer is then deposited, and another mask is used to complete the etch toward the structure. The resulting cavity retains unetched second dielectric material along its sidewalls. This approach is designed to provide access to a deep fuse structure while controlling the cavity’s formation.

Career Highlights

Cumpian’s listed patent count is 1 patent. The patent reflects work in semiconductor processing, particularly the formation of cavities that provide access to deeply positioned fuse structures.

Collaborations

Cumpian’s listed coworkers include Gary Pfeffer and Joel Patrick Mitchell. The supplied information associates him with Motorola Corporation.

Conclusion

Fred Cumpian’s identified patent describes a staged dielectric etching technique for accessing deep fuse structures, highlighting his contribution to semiconductor fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…