Motorola Corporation

Fred Cumpian

Gary Pfeffer

Joel Patrick Mitchell

A method for forming a cavity ( ) to a structure such as a poly fuse ( ) with a deep etch process whereby a mask is formed over the structure a first dielectric layer ( ) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer ( ) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric ( ) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity

Growing community of inventors

Austin, TX, United States of America

Fred Cumpian