Bernin, France

François Darras

This inventor holds 1 USPTO granted patent. Top assignee: Soitec. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: François Darras. Retrieved from https://idiyas.com/inventor/françois-darras

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: François Darras: Inventor in MEMS Composite Structures

Introduction

François Darras is an inventor based in Bernin, France, and is associated with Soitec. His patent work concerns composite structures designed for microelectromechanical systems (MEMS).

Latest Patents

Darras is credited with 1 patent: “Composite Structure for MEMS Applications, Comprising a Deformable Layer and a Piezoelectric Layer, and Associated Manufacturing Process.” The invention describes a receiver substrate with a cavity that is either empty or filled with sacrificial material, a single-crystal semiconductor layer, and a piezoelectric layer positioned between that semiconductor layer and the receiver substrate. The structure can be used to form a device with a movable membrane above a cavity, and the patent also describes a method for manufacturing the composite structure.

Career Highlights

Darras’s listed patent highlights work on combining semiconductor and piezoelectric layers for MEMS applications. The design’s cavity and movable membrane provide a structural basis for devices that rely on mechanical movement.

Collaborations

Darras is associated with Soitec, a company whose work includes semiconductor materials and technologies. His patent’s focus on layered semiconductor structures aligns with that technical field.

Conclusion

François Darras’s patent documents a composite structure and manufacturing approach for MEMS devices, highlighting his contribution to semiconductor-based innovation at Soitec.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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