Company Filing History:
2 out of 4,992 
1 out of 8,033 Years Active: 1977-1979
Title: Franklyn C Blaha: Innovator in Radiation-Hardened Transistor Technology
Introduction
Franklyn C Blaha is a notable inventor based in Glen Burnie, MD (US). He holds a total of 3 patents that contribute significantly to the field of semiconductor technology, particularly in radiation-hardened devices.
Latest Patents
One of his latest patents is the "Radiation Hardened Drain-Source Protected MNOS Transistor." This invention discloses a design where a layer of silicon oxide overlies the channel and junctions formed by the intersections of the drain and source regions with the channel. The design includes relatively thick portions of the silicon oxide layer that provide protection to the drain and source junctions. The central section of the channel is covered by a thinner portion of the silicon oxide layer, allowing for efficient electron transport during irradiation, which prevents charge build-up that could affect the transistor's characteristics.
Another significant patent is the "MNOS Memory Transistor Having a Redeposited Silicon Nitride Gate." This invention employs a processing technique that utilizes two separate silicon nitride depositions to create a radiation-hardened memory transistor. The design minimizes the amount of silicon dioxide used in non-memory regions, enhancing the device's performance and reliability.
Career Highlights
Throughout his career, Franklyn C Blaha has worked with prominent organizations, including the United States of America as represented by the Secretary of the Air Force and Westinghouse Electric Corporation. His contributions to these organizations have been instrumental in advancing technology in the field of radiation-hardened devices.
Collaborations
Franklyn has collaborated with notable individuals such as James R Cricchi and Michael D Fitzpatrick. Their combined expertise has contributed to the successful development of innovative technologies in the semiconductor industry.
Conclusion
Franklyn C Blaha's work in radiation-hardened transistor technology showcases his innovative spirit and dedication to advancing the field. His patents reflect a deep understanding of semiconductor design and a commitment to enhancing device reliability in challenging environments.