Premstaetten, Austria

Frank Fournel

This inventor holds 1 USPTO granted patent. Top assignees: Ams Ag, Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Frank Fournel. Retrieved from https://idiyas.com/inventor/frank-fournel-77aqlcvg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Frank Fournel: Innovator in Semiconductor Technology

Introduction

Frank Fournel is a notable inventor based in Premstaetten, Austria. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Frank Fournel holds a patent for a semiconductor device and method for manufacturing a semiconductor device. This invention includes a substrate body with a surface, a conductor that covers part of the surface, and a dielectric arranged on the uncovered part. The conductor is in contact with the substrate body, and together with the dielectric, they form a layer with a bonding surface that has surface topographies of less than 10 nm. Notably, this semiconductor device is free of a diffusion barrier.

Career Highlights

Throughout his career, Frank Fournel has worked with prominent companies in the semiconductor industry, including AMS AG and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His work has contributed to advancements in semiconductor manufacturing processes and device efficiency.

Collaborations

Frank has collaborated with talented individuals such as Jens Hofrichter and Manuel Kaschowitz, further enhancing his contributions to the field.

Conclusion

Frank Fournel's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in advancing modern technology. His patent and collaborations reflect a commitment to excellence in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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