The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Mar. 30, 2020
Ams Ag, Premstaetten, AT;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Jens Hofrichter, Premstaetten, AT;
Manuel Kaschowitz, Premstaetten, AT;
Bernhard Poelzl, Premstaetten, AT;
Karl Rohracher, Premstaetten, AT;
Amandine Jouve, Premstaetten, AT;
Viorel Balan, Premstaetten, AT;
Romain Crochemore, Premstaetten, AT;
Frank Fournel, Premstaetten, AT;
Sylvain Maitrejean, Premstaetten, AT;
AMS AG, Premstaetten, AT;
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris, FR;
Abstract
A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.