Hong Kong, China

Foon Ming Chan

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kla Corporation. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Foon Ming Chan. Retrieved from https://idiyas.com/inventor/foon-ming-chan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Foon Ming Chan: Semiconductor Inspection and Metrology Innovation.

Introduction

Foon Ming Chan is an inventor associated with Hong Kong and Kla Corporation. Her work includes a patent describing an inspection and metrology system for examining all four sides of semiconductor devices.

Latest Patents

Chan is credited with 1 patent: “System and Method for Inspection and Metrology of Four Sides of Semiconductor Devices.” The disclosed method places samples in a carrier and uses a pick-and-place stage assembly to move them into an imaging tool. Two imaging channels inspect the samples’ first and second sides. The carrier is then rotated by 90 degrees and moved to the opposite side of the tool, allowing the samples’ third and fourth sides to be imaged before they are returned to the carrier.

Career Highlights

Chan’s patent focuses on a process for inspecting semiconductor devices from multiple sides. By coordinating sample handling, carrier rotation, and imaging, the method provides a structured approach to four-sided inspection and metrology.

Collaborations

The supplied information names Harry Paredaens and Maarten Brocatus as Chan’s coworkers. It does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Foon Ming Chan’s patent reflects an innovation in semiconductor inspection, combining automated sample movement and multi-channel imaging to examine all four sides of a device.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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