Floyd O Arntz

Title: The Innovative Contributions of Floyd O. Arntz

Introduction

Floyd O. Arntz is a notable inventor based in Newton, MA, who has made significant contributions to the field of semiconductor technology. His work primarily focuses on memory devices, particularly in the development of buried junction MOS memory capacitors. With one patent to his name, Arntz has demonstrated a commitment to advancing electronic memory systems.

Latest Patents

Arntz's most recent patent is titled "Buried Junction MOS Memory Capacitor Target for Electron Beam." This invention describes a buried junction MOS memory capacitor target device designed for electron beam addressable READ/WRITE memories. The structure includes a planar semiconductor substrate with a highly conducting coating that provides low resistance ohmic contact to the substrate's backside. An N-type planar semiconductor overlayer forms a bipolar detector junction with the substrate's topside. The device is engineered to work with an electron beam capable of penetrating the insulating layers to generate carrier pairs in the N-type overlayer.

Career Highlights

Floyd O. Arntz has been associated with Micro-Bit Corporation, where he has applied his expertise in semiconductor technology. His innovative designs and methods have contributed to the advancement of memory capacitor technology, enhancing the efficiency and functionality of electronic devices. His work is characterized by a focus on improving the operational capabilities of memory systems through novel engineering solutions.

Conclusion

Floyd O. Arntz's contributions to the field of semiconductor technology, particularly through his patented innovations, highlight his role as a significant inventor in the industry. His work continues to influence the development of advanced memory systems, showcasing the importance of innovation in technology.