Company Filing History:
Years Active: 2022-2025
Title: Fevzi Arkun: Innovator in III-Nitride Transistor Technology
Introduction
Fevzi Arkun is a prominent inventor based in Malibu, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced III-nitride transistors. With a total of 3 patents to his name, Arkun continues to push the boundaries of innovation in this critical area of research.
Latest Patents
Arkun's latest patents include groundbreaking technologies that enhance the performance of high-electron-mobility transistors (HEMTs). One of his notable inventions is the "Self-passivated nitrogen-polar III-nitride transistor." This patent describes a HEMT that features a channel layer of a first III-Nitride semiconductor material, which is grown on a nitrogen-polar surface of a back barrier layer of a second III-Nitride semiconductor material. The design allows for a positively charged polarization interface and a two-dimensional electron gas in the channel layer, optimizing its performance.
Another significant patent is the "Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications." This invention outlines a HEMT that includes a substrate, a channel layer, and electrodes that enhance its efficiency. The channel layer comprises a first GaN layer and a first graded AlGaN layer, with the aluminum proportion increasing with distance from the GaN layer, which contributes to improved linearity and power handling.
Career Highlights
Fevzi Arkun is currently associated with Hrl Laboratories, LLC, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of HEMTs, which are crucial for various high-power and high-frequency applications.
Collaborations
Arkun collaborates with talented professionals in his field, including Daniel Denninghoff and Andrea Corrion. Their combined efforts contribute to the innovative projects at Hrl Laboratories, LLC.
Conclusion
Fevzi Arkun is a key figure in the development of advanced III-nitride transistor technologies. His patents reflect a commitment to innovation and excellence in semiconductor research. Through his work, he continues to influence the future of electronic devices and applications.