Hrl Laboratories, LLC

Fevzi Arkun

Hasan Sharifi

Jeong-sun Moon

Andrea Corrion

Daniel Denninghoff

Micha Fireman

Samuel Whiteley

A ScAlN based filter may include a ScAlN material formed directly on a III-N material. The III-N material may include an n-type III-N layer or a III-N heterostructure having a 2DEG therein. The ScAlN based filter may be monolithically integrated with a III-N device such as a HEMT device to form a monolithically integrated circuit.

Semiconductor materials and devices including iii-nitride layers integrated with scandium aluminum nitride

A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively charged polarization interface and two-dimensional electron gas is obtained in the channel layer; a passivation, capping layer, of said first III-Nitride semiconductor material, formed on top of and in contact with a first portion of a N-polar surface of said channel layer; a gate trench traversing the passivation, capping layer, and ending at said N-polar surface of said channel layer; and a gate conductor filling said gate trench.

Self-passivated nitrogen-polar III-nitride transistor

A HEMT comprising: a substrate; a channel layer coupled to the substrate; a source electrode coupled to the channel layer; a drain electrode coupled to the channel layer; and a gate electrode coupled to the channel layer between the source electrode and the drain electrode; wherein the channel layer comprises: at least a first GaN layer; and a first graded AlGaN layer on the first GaN layer, the Al proportion of the first graded AlGaN layer increasing with the distance from the first GaN layer.

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Fevzi Arkun