The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Dec. 22, 2023
Hrl Laboratories, Llc, Malibu, CA (US);
Daniel Denninghoff, Malibu, CA (US);
Andrea Corrion, Malibu, CA (US);
Fevzi Arkun, Malibu, CA (US);
Micha Fireman, Malibu, CA (US);
HRL LABORATORIES, LLC, Malibu, CA (US);
Abstract
A HEMT comprising a channel layer of a first III-Nitride semiconductor material, grown on a N-polar surface of a back barrier layer of a second III-Nitride semiconductor material; the second III-Nitride semiconductor material having a larger band gap than the first III-Nitride semiconductor material, such that a positively charged polarization interface and two-dimensional electron gas is obtained in the channel layer; a passivation, capping layer, of said first III-Nitride semiconductor material, formed on top of and in contact with a first portion of a N-polar surface of said channel layer; a gate trench traversing the passivation, capping layer, and ending at said N-polar surface of said channel layer; and a gate conductor filling said gate trench.