Los Altos Hills, CA, United States of America

Fereydoon Safai

This inventor holds 12 USPTO granted patents and 2 published patent applications. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2005-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fereydoon Safai. Retrieved from https://idiyas.com/inventor/fereydoon-safai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 41.7

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 337(Granted Patents)


Location History:

  • Los Alto Hills, CA (US) (2008)
  • Palo Alto, CA (US) (2012)
  • Los Altos Hills, CA (US) (2005 - 2013)

Company Filing History:


Years Active: 2005-2013

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12 patents (USPTO):Explore Patents

Title: Fereydoon Safai: Pioneering Inventor from Los Altos Hills, CA

Introduction: Fereydoon Safai is a renowned inventor based in Los Altos Hills, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Safai holds several patents in the areas of telecommunications, semiconductor technology, and renewable energy, showcasing his innovative spirit and forward-thinking approach.

Career Highlights: With a career spanning over three decades, Safai has worked with leading tech companies, research institutions, and universities, playing a key role in developing cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Safai has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and excellence in all his projects. His collaborative efforts have led to the successful development of numerous groundbreaking inventions.

Conclusion: Fereydoon Safai's passion for innovation, coupled with his technical expertise and collaborative mindset, has solidified his reputation as a pioneering inventor in the tech world. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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