This inventor holds 1 USPTO granted patent. Top assignee: Changchun University of Science and Technology. Active years: 2024.
Company Filing History:
Years Active: 2024
Title: Innovations of Fengyuan Lin in Detector Material Technology.
Introduction
Fengyuan Lin is a notable inventor based in Changchun, China. He has made significant contributions to the field of detector materials, showcasing his expertise through innovative patent developments. His work is particularly focused on the preparation methods of detector materials, which have important applications in various technological fields.
Latest Patents
Fengyuan Lin holds a patent titled "Detector material and preparation method thereof." This patent describes a preparation method that involves epitaxially growing a buffer layer on a gallium arsenide substrate. The process includes depositing a silicon dioxide layer on the buffer layer and etching it according to a strip pattern using photolithography. This method allows for the formation of strip growth regions with varying widths, which ultimately influences the composition and layer thickness of the detector material. The use of molecular beam epitaxy (MBE) technology under specific growth conditions further enhances the quality of the detector material.
Career Highlights
Fengyuan Lin is affiliated with Changchun University of Science and Technology, where he continues to engage in research and development in the field of materials science. His innovative approach to detector materials has positioned him as a key figure in his area of expertise. With a patent portfolio that includes 1 patent, he demonstrates a commitment to advancing technology through his research.
Collaborations
Fengyuan Lin collaborates with esteemed colleagues such as Rui Chen and Huimin Jia. Their combined efforts contribute to the advancement of research in detector materials and related technologies.
Conclusion
Fengyuan Lin's contributions to the field of detector materials exemplify the impact of innovative research and development. His patent on the preparation method of detector materials highlights his expertise and commitment to advancing technology. Through his work at Changchun University of Science and Technology, he continues to influence the field positively.