The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Nov. 08, 2022
Changchun University of Science and Technology, Changchun, CN;
Qun Hao, Changchun, CN;
Zhipeng Wei, Changchun, CN;
Jilong Tang, Changchun, CN;
Huimin Jia, Changchun, CN;
Lei Liao, Changchun, CN;
Kexue Li, Changchun, CN;
Fengyuan Lin, Changchun, CN;
Rui Chen, Shenzhen, CN;
Shichen Su, Guangzhou, CN;
Shuangpeng Wang, Changchun, CN;
CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY, Changchun, CN;
Abstract
Provided is a preparation method of a detector material. The present disclosure epitaxially grows a buffer layer on a surface of a gallium arsenide substrate, deposits a silicon dioxide layer on the buffer layer, and etches the silicon dioxide layer on the buffer layer according to a strip pattern by photolithography and etching to form strip growth regions with continuous changes in width. Finally, a molecular beam epitaxy (MBE) technology is used to epitaxially grow the detector material in the strip growth regions under set epitaxy growth conditions. Because of the same mobility of atoms arriving at the surface of the substrate, numbers of atoms migrating to the strip growth regions are different due to different widths of the strip growth regions, such that compositions of the material change with the widths of the strip growth regions or a layer thickness changes with the widths of the strip growth regions.