Fengwei Dai

Title: Fengwei Dai and Wafer-Level Chip Packaging Innovation.

Introduction

Fengwei Dai is an inventor associated with Wuxi, China, whose patent work addresses chip packaging and electrical signal integrity. His listed patent portfolio includes 1 patent.

Latest Patents

Dai is named on “Wafer-level chip structure, multiple-chip stacked and interconnected structure and fabricating method thereof.” The invention describes a wafer-level chip structure with a through-silicon via (TSV), an active region, a multilayer redistribution layer, a bump, an insulation dielectric layer, and a frustum-shaped transition structure connected to the TSV.

The patent introduces a frustum-type impedance transition between the TSV exposed area on the wafer’s backside and the under-bump metallization (UBM). This design aims to match the impedance between the TSV and UBM, helping reduce signal distortion caused by an abrupt impedance change.

Career Highlights

Dai’s listed company affiliations include Shanghai Xianfang Semiconductor Co., Ltd. and National Center for Advanced Packaging Co., Ltd. His patent reflects work in wafer-level packaging, through-silicon vias, and interconnected stacked-chip structures.

Collaborations

Liqiang Cao and Yangyang Yan are identified as Dai’s coworkers. Their names are provided as professional associations, without further details about their roles in the patent.

Conclusion

Fengwei Dai’s documented invention focuses on improving signal integrity in advanced chip packaging through impedance matching between a TSV and UBM.