Fengliang Xue

Title: The Innovative Journey of Fengliang Xue

Introduction

Fengliang Xue, an esteemed inventor based in San Jose, CA, has made significant contributions to the field of memory technology. With a remarkable portfolio of 8 patents, he has been instrumental in the development of advanced ReRAM (Resistive Random Access Memory) technology, paving the way for faster and more efficient memory solutions.

Latest Patents

Among his latest innovations, Fengliang Xue’s ReRAM memory array stands out. This cutting-edge design incorporates ReRAM memory cells that feature a ReRAM device integrated with two series-connected select transistors. The design allows for a novel erasing process where the bit line coupled to selected ReRAM memory cells is biased at a first voltage, while the source line is set at a higher potential. This differential voltage enables effective erasure of the ReRAM device while ensuring that unselected cells remain inactive, thereby improving memory efficiency.

Additionally, his method for erasing a ReRAM memory cell utilizes a select circuit comprising two series-connected select transistors. The innovative approach ensures that when a cell is selected for erasing, it receives the appropriate voltage bias, facilitating a precise and reliable erase operation.

Career Highlights

Throughout his career, Fengliang has garnered experience at reputable companies such as Microchip Technology Inc. and Microsemi Soc Corporation. His work has consistently focused on enhancing memory technology, showcasing his commitment to advancing the field.

Collaborations

Fengliang Xue has collaborated with notable professionals, including John L McCollum and Fethi Dhaoui. These partnerships have enabled him to drive innovation and contribute to the successful development of groundbreaking technologies.

Conclusion

Fengliang Xue's expertise and dedication to innovation in the technology sector continue to impact the evolution of memory technology. With his robust portfolio and career achievements, he remains a prominent figure in the world of inventors, driving the future of ReRAM advancements.