The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

May. 07, 2019
Applicant:

Microchip Technology Inc., Chandler, AZ (US);

Inventors:

Fengliang Xue, San Jose, CA (US);

Fethi Dhaoui, Mountain House, CA (US);

Victor Nguyen, San Ramon, CA (US);

John L. McCollum, Orem, UT (US);

Assignee:

Microchip Technology Inc., Chandler, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0061 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0078 (2013.01);
Abstract

A method for programming a resistive random-access memory (ReRAM) cell includes passing a first current through the ReRAM device for a first period of time, the first current selected to create a leakage path through the ReRAM device, and after passing the first current through the ReRAM device passing a second current through the ReRAM device for a second period of time shorter than the first period of time, the second current selected to create a current path having a desired resistance through the leakage path through the ReRAM device.


Find Patent Forward Citations

Loading…