Feng Qiao

Title: The Innovative Contributions of Feng Qiao

Introduction

Feng Qiao is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of technology, particularly in the area of semiconductor manufacturing. His work has led to advancements that enhance the efficiency and effectiveness of etching processes used in the industry.

Latest Patents

Feng Qiao holds a patent for "Enhanced etch selectivity using halides." This innovative method involves performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer consists of a first material, while the second layer contains a second material that is different from the first. The dry etch process creates a passivation layer, which includes a byproduct on the surfaces of the second material. After the dry etch process, a portion of the first material remains, and the method further introduces a halide gas to enhance the passivation layer on the surfaces of the second material. Feng Qiao's patent represents a significant advancement in etching technology, with 1 patent to his name.

Career Highlights

Feng Qiao is currently employed at Applied Materials, Inc., a leading company in the semiconductor and display manufacturing equipment industry. His role at the company allows him to apply his innovative ideas and contribute to the development of cutting-edge technologies.

Collaborations

Feng has collaborated with notable colleagues, including David Knapp and Hailong Zhou. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Feng Qiao's contributions to the field of semiconductor manufacturing through his innovative patent and work at Applied Materials, Inc. highlight his importance as an inventor. His advancements in etching technology continue to influence the industry positively.