This inventor holds 1 USPTO granted patent. Top assignee: Institute of Microelectronics. Active years: 2002.
Company Filing History:
Years Active: 2002
Title: Innovations of Feng Han Hua in Electrostatic Devices
Introduction
Feng Han Hua is a notable inventor based in Singapore, recognized for his contributions to the field of electrostatic devices. His innovative approach has led to advancements that significantly enhance the performance and reliability of these devices.
Latest Patents
Feng Han Hua holds a patent for a "Method to prevent charging effects in electrostatic devices." This invention addresses the issue of charge accumulation in insulating materials on the active surfaces of electrostatic devices. By replacing the conventional dielectric material with a semi-insulating material, his method effectively reduces charging effects while preventing short-circuits when surfaces come into contact. The semi-insulating film used in this invention is resistant to insulation breakdown within the operational voltage range. Examples of materials utilized include semi-insulating polysilicon (SIPOS) and silicon-rich silicon nitride. He has 1 patent to his name.
Career Highlights
Feng Han Hua is affiliated with the Institute of Microelectronics, where he has been instrumental in developing innovative solutions for electrostatic devices. His work has garnered attention for its practical applications and potential to improve device functionality.
Collaborations
Feng has collaborated with esteemed colleagues such as Olaf Knueppel and Victor Samper, contributing to a dynamic research environment that fosters innovation and technological advancement.
Conclusion
Feng Han Hua's contributions to the field of electrostatic devices exemplify the impact of innovative thinking in technology. His patented method not only addresses critical challenges but also paves the way for future advancements in the industry.