The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Mar. 01, 2001
Victor Donald Samper, Singapore, SG;
Uppili Sridhar, Singapore, SG;
Olaf Knueppel, Berlin, DE;
Feng Han Hua, Singapore, SG;
Hui Wing Cheong, Singapore, SG;
Institute of Microelectronics, Singapore, SG;
Abstract
The present invention significantly reduces charging effects in electrostatic devices due to charge accumulation in or on the insulating materials on the active surfaces of the devices. This has been achieved by replacing the dielectric material that is normally present between the force generating conductor surfaces with a semi-insulating material. This semi-insulating film overcomes the effects of charging, while avoiding short-circuits when the surfaces are pulled into contact. It is not subject to insulation breakdown within the range of voltages used to operate the device. Examples of semi-insulating materials that may be used are semi-insulating polysilicon (SIPOS) and silicon rich silicon nitride.