Sunnyvale, CA, United States of America

Feng Gao


Average Co-Inventor Count = 5.4

ph-index = 4

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 2005-2018

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9 patents (USPTO):

Title: **Feng Gao: Innovator in Flash Memory Technology**

Introduction

Feng Gao is a prominent inventor known for his significant contributions to the field of flash memory technology. Based in Sunnyvale, California, he has been granted a total of 9 patents, showcasing his expertise and innovative approach to memory devices. His work primarily focuses on the design and programming of NAND flash memory structures, which are critical for modern electronic devices.

Latest Patents

Among his latest patents, Feng Gao has developed methods for programming a continuous-channel flash memory device. This invention details a split gate NAND flash memory structure, formed on a semiconductor substrate of a specific conductivity type. The design includes distinct regions of opposing conductivity types within the substrate, allowing for an efficient layout of the NAND structure. The invention features a continuous first channel region situated between these regions, with numerous floating gates arranged to maximize performance. Furthermore, he has delineated methods for programming, erasing, and reading flash memory, along with manufacturing processes that enhance functionality and reliability.

Career Highlights

Feng Gao's professional journey is marked by his association with Silicon Storage Technology, Inc., where he leverages his extensive knowledge in semiconductor technology to drive innovation. His efforts in developing advanced memory solutions have positioned him as a key player in the industry. His 9 patents reflect a relentless pursuit of excellence and a commitment to improving data storage capabilities.

Collaborations

In his career, Feng has collaborated with talented colleagues such as Dana Lee and Ya-Fen Lin, contributing to a collaborative environment that fosters innovation. These partnerships have undoubtedly enriched his work and led to enhanced advancements in the field of flash memory technology.

Conclusion

Through his inventive spirit and collaborative efforts, Feng Gao has made a significant impact on the world of flash memory. His contributions extend beyond mere technological advancements; they also embody the innovative spirit that drives progress in the electronics industry. As technology continues to evolve, Feng's work will undoubtedly play a vital role in shaping the future of data storage solutions.

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