Dresden, Germany

Felix Fuernhammer

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2012-2013

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3 patents (USPTO):Explore Patents

Title: Felix Fuernhammer: Innovator in Semiconductor Technology

Introduction

Felix Fuernhammer is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of semiconductor components.

Latest Patents

Felix's latest patents include innovative designs that improve semiconductor performance. One of his patents, titled "Bipolar integration without additional masking steps," describes a BiMOS semiconductor component that utilizes a semiconductor substrate. This invention features a depletion-type MOS transistor and a bipolar transistor, allowing for a low process expenditure by using the same basic structure for doping regions in both transistors. Another significant patent is for a "Semiconductor component with integrated hall effect sensor." This device integrates a Hall effect sensor with a high-voltage MOS transistor, simplifying the process integration and enhancing the overall functionality of the semiconductor device.

Career Highlights

Felix Fuernhammer is currently employed at X-Fab Semiconductor Foundries AG, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing advanced semiconductor technologies that meet the demands of modern electronics.

Collaborations

Felix has collaborated with notable colleagues such as Thomas Uhlig and Christoph Ellmers. Their combined expertise has contributed to the successful development of various semiconductor technologies.

Conclusion

Felix Fuernhammer's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor components.

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