Shenzhen, China

Fei Ye

This inventor holds 2 USPTO granted patents. Top assignees: Atop Lighting Co., Ltd, Honor Device Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fei Ye. Retrieved from https://idiyas.com/inventor/fei-ye-kedrko5v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Fei Ye - Innovator in Interaction Control Technology

Introduction

Fei Ye is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of interaction control technology. His innovative approach has led to the development of a unique patent that enhances communication between devices.

Latest Patents

Fei Ye holds a patent for an "Interaction control method and apparatus, terminal, and storage medium." This patent describes a method that involves acquiring NFC device status information in response to triggering near field communication (NFC). The method includes status information of both a master device and a slave device. It provides an interactive function based on the acquired NFC device status information, allowing for effective information exchange between the devices.

Career Highlights

Fei Ye is currently employed at Honor Device Co., Ltd., where he continues to innovate and develop new technologies. His work focuses on improving user interaction through advanced communication methods. His contributions have been instrumental in enhancing the functionality of NFC technology.

Collaborations

Fei Ye collaborates with talented coworkers, including Yunfei Qi and Yuzhuo Peng. Together, they work on various projects that aim to push the boundaries of interaction control technology.

Conclusion

Fei Ye's innovative work in interaction control technology exemplifies the impact of modern inventions on communication. His patent and ongoing contributions continue to shape the future of device interaction.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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