Shenzhen, China

Fei Yan

USPTO Granted Patents = 5 

Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013-2025

Loading Chart...
5 patents (USPTO):

Title: Fei Yan: Innovator in Microfluidics and Patterning Processes

Introduction

Fei Yan is a prominent inventor based in Shenzhen, China, known for his contributions to the fields of microfluidics and patterning processes. With a total of five patents to his name, he has made significant advancements that enhance the efficiency and effectiveness of various technologies.

Latest Patents

Fei Yan's latest patents include a method for determining hot spot ranking based on wafer measurement. This innovative method involves obtaining a set of hot spots from a patterning process, measuring values of parameters corresponding to these hot spots, and simulating values for comparison. The process culminates in determining a ranking of hot spots based on measurement feedback derived from the data. Another notable patent is for a microfluidic system that includes a container, an ultrasound transmitter assembly, and a phononic crystal plate. This system is designed to accommodate solutions containing microparticles and utilizes ultrasonic waves to generate an acoustic microstreaming vortex, which induces shear stress on the microparticles.

Career Highlights

Throughout his career, Fei Yan has worked with notable companies such as Superd Co. Ltd. and ASML Netherlands B.V. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in his field.

Collaborations

Fei Yan has collaborated with talented individuals such as Ning Liu and Hairong Zheng, further enhancing his work through shared expertise and innovative ideas.

Conclusion

Fei Yan's contributions to the fields of microfluidics and patterning processes demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of complex systems and a drive to improve technological applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…