Fei-Xia Yu

Title: Fei-Xia Yu: Innovator in Pixel Structure Technology

Introduction

Fei-Xia Yu is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of image sensor technology. His innovative work has led to the development of a unique pixel structure that enhances the performance of electric devices.

Latest Patents

Fei-Xia Yu holds a patent for a "Pixel structure and electric device." This patent describes a pixel structure of an image sensor that includes several key components. A crystalline layer of a first doping type is formed on a substrate. A photodiode region is created within this crystalline layer. Additionally, a gate of a source follower transistor is positioned on the top surface of the crystalline layer. A reset gate is also formed on this surface. Furthermore, a doped region of a second doping type is established in the crystalline layer, situated between the reset gate and the gate of the source follower. The first doping type differs from the second, and the photodiode region connects to the doped region beneath the top surface of the crystalline layer, serving as an anti-blooming path. This innovative design enhances the functionality of image sensors.

Career Highlights

Fei-Xia Yu is currently employed at Himax Imaging, Inc., where he continues to push the boundaries of technology in image sensors. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Fei-Xia Yu collaborates with talented individuals in his field, including Yang Wu and Yu Hin Desmond Cheung. Their combined expertise contributes to the advancement of technology in image sensing.

Conclusion

Fei-Xia Yu's contributions to pixel structure technology exemplify the innovative spirit of modern inventors. His patent and ongoing work at Himax Imaging, Inc. highlight the importance of advancements in image sensor technology.