The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Aug. 13, 2018
Applicant:

Himax Imaging Limited, Tainan, TW;

Inventors:

Yang Wu, Tainan, TW;

Fei-Xia Yu, Tainan, TW;

Yu Hin Desmond Cheung, Tainan, TW;

Assignee:

Himax Imaging Limited, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14656 (2013.01);
Abstract

A pixel structure of an image sensor is provided and includes following units. A crystalline layer of a first doping type is formed on a substrate. A photodiode region is formed in the crystalline layer. A gate of a source follower transistor is formed on a top surface of the crystalline layer. A reset gate is formed on the top surface of the crystalline layer. A doped region of a second doping type is formed in the crystalline layer and formed between the reset gate and the gate of the source follower. The first doping type is different from the second doping type, and the photodiode region is connected to the doped region under the top surface of the crystalline layer as an anti-blooming path.


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